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 HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2001.01.01 Page No. : 1/3
HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High-definition CRT display video output, wide-band amplifier applications.
Features
* High fT: fT=500MHz * High breakdown voltage: VCEO=120V min * Small reverse transfer capacitance
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ..................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 900 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ...................................................................................... 120 V VCEO Collector to Emitter Voltage ................................................................................... 120 V VEBO Emitter to Base Voltage ............................................................................................. 3 V IC Collector Current ...................................................................................................... 200 mA Icp Peak Collector Current ............................................................................................ 400 mA
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 120 120 3 60 40 Typ. 160 400 2.1 Max. 0.1 0.1 1 1 320 Unit V V V uA uA V V Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VEB=2V, IC=0 IC=30mA, IB=3mA IC=30mA, IB=3mA VCE=10V, IC=10mA VCE=10V, IC=100mA VCE=10V, IC=50mA, IE=0, VCB=30V, f=1MHZ
*Pulse Test : Pulse Width 380us, Duty Cycle2%
MHz pF
Classification of hFE1
Rank Range D 60-120 E 100-200 F 160-320
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 1000
Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2001.01.01 Page No. : 2/3
Saturation Voltage & Collector Current
Saturation Voltage (mV)
100
VCE=10V
hFE
100
VCE(sat) @ IC=10IB 10
10 0.1 1 10 100 1000
1 0.1 1 10 100 1000
Collector Current (mA)
Collector Current (mA)
Saturation Voltage & Collector Current
1000 10
Output Capacitance & Reverse-Biased Voltage
VBE(sat) @ IC=10IB
Saturation Voltage (mV)
Capacitance (Pf)
Cob
100 0.1 1 10 100 1000
1 0.1 1 10 100
Collector Current (mA)
Reverse-Biased Voltage (V)
Safe Operating Area
1000 1000 900 PT=1ms PT=100ms
Power Derating
Power Dissipation-PD(mW)
800 700 600 500 400 300 200 100
Collector Current (A)
PT=1s 100
10 1 10 100 1000
0 0 20 40 60 80 100
o
120
140
160
Forward Voltage (V)
Ambient Temperature-Ta( C)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
12 3
Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2001.01.01 Page No. : 3/3
2
Marking :
HSMC Logo Part Number Date Code Rank Product Series
3
Laser Mark
HSMC Logo Product Series
C
D
Part Number
H I E F
G
Ink Mark Style : Pin 1.Emitter 2.Collector 3.Base
1
3-Lead TO-92 Plastic Package HSMC Package Code : A
*:Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
* Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
* Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification


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